Theoretical comparison analysis of long and short external cavity semiconductor laser

نویسندگان

چکیده مقاله:

In this paper, considering optical feedback as an optical injection, and taking in to account round-trip time role in the external cavity, a standard small signal analysis is applied on laser rate equations. By considering the relaxation oscillation (f2) and external cavity frequencies (f) ratio for semiconductor laser, field amplitude response gain, optical phase and carrier number for long external cavities (LEC) and short external cavities (SEC) are obtained. Laser output intensity and resonance peak dynamics have been shown by bifurcation diagrams. Furthermore, the effects of some control parameters, such as enhancement factor, pumping current and feedback strength, on response gain have been discussed in short and long external cavities. As a result, in optical injection, for SEC, compared to LEC, more varied dynamics are observed. Also, higher values of the response gain peak in SEC, in comparison with LEC, make SEC to be affected more by the injected beam. SEC provides greater bandwidth, and also better performance in the range of compared to LEC.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ultralow noise miniature external cavity semiconductor laser

Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with opt...

متن کامل

Optical stabilization of an external cavity semiconductor laser by creation and destruction of external cavity modes

D.W. Sukow, F. Rogister, P. Mégret, O. Deparis, and A. Gavrielides Department of Physics and Engineering, Washington and Lee University, Lexington, Virginia 24450, USA Advanced Research in Optics (ARO), Service d’Electromagnétisme et de Télécommunications, Faculté Polytechnique de Mons, 31 Boulevard Dolez, B-7000 Mons, Belgium Nonlinear Optics Center, Air Force Research Laboratory AFRL/DELO 355...

متن کامل

High-dimensional chaotic dynamics of an external cavity semiconductor laser.

We report experimental realization of high{dimensional chaos in a semiconductor laser with delayed feedback from a T{shaped cavity. We study the transition phenomena from regular to high{dimensional chaotic behavior and analyze the time series quantitatively. Correlation dimensions up to C 2 ' 7 are determined reliably from experimental data by a combination of a Singular Value Analysis and a G...

متن کامل

Single frequency erbium fiber external cavity semiconductor laser

External cavity semiconductor lasers have long been considered an attractive way to achieve narrow linewidth single frequency operation, as the linewidth is expected to vary inversely as the square of the cavity length. In this regard, single mode fibers have often been employed as the basis of the external cavity, as they offer a compact and reasonably robust way of forming long cavity lengths...

متن کامل

Instabilities in a grating feedback external cavity semiconductor laser.

Output power fluctuations in a grating external cavity diode laser with Littman configuration are described, showing peculiar chaotic behaviors of self-pulsation at the L-I curve kink points. Different spectral characteristics with multiple peaks are observed at upper and lower state of the self-pulsation. It is found also that P-N junction voltage jumps in a same pace with the pulsation. The o...

متن کامل

Extreme intensity pulses in a semiconductor laser with a short external cavity.

We present a numerical study of the pulses displayed by a semiconductor laser with optical feedback in the short-cavity regime, such that the external cavity round-trip time is shorter than the laser relaxation oscillation period. For certain parameters there are occasional pulses, which are high enough to be considered extreme events. We characterize the bifurcation scenario that gives rise to...

متن کامل

منابع من

با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ذخیره در منابع من قبلا به منابع من ذحیره شده

{@ msg_add @}


عنوان ژورنال

دوره 8  شماره None

صفحات  13- 22

تاریخ انتشار 2014-01

با دنبال کردن یک ژورنال هنگامی که شماره جدید این ژورنال منتشر می شود به شما از طریق ایمیل اطلاع داده می شود.

کلمات کلیدی

میزبانی شده توسط پلتفرم ابری doprax.com

copyright © 2015-2023